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Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
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Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
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Date
2008
Proceedings Paper
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16645.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
De Jaeger, Brice
;
Leys, Frederik
;
Hellings, Geert
;
Martens, Koen
;
Eneman, Geert
;
Brunco, David
;
Loo, Roger
;
Shamiryan, Denis
;
Vandeweyer, Tom
;
Winderickx, Gillis
;
Vrancken, Evi
;
De Meyer, Kristin
;
Caymax, Matty
;
Pantisano, Luigi
;
Meuris, Marc
;
Heyns, Marc
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1871
since deposited on 2021-10-17
Acq. date: 2025-12-15
Citations
Metrics
Views
1871
since deposited on 2021-10-17
Acq. date: 2025-12-15
Citations