Publication:

Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

Date

2008
Proceedings Paper
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dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLeys, Frederik
dc.contributor.authorHellings, Geert
dc.contributor.authorMartens, Koen
dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorLoo, Roger
dc.contributor.authorShamiryan, Denis
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorVrancken, Evi
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorCaymax, Matty
dc.contributor.authorPantisano, Luigi
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T09:05:40Z
dc.date.available2021-10-17T09:05:40Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14176
dc.source.beginpage873
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage876
dc.title

Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

dc.typeProceedings paper
dspace.entity.typePublication
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