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Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics
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Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics
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Date
2013-07
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Han, Jeong Hwan
;
Ungur, Elisaveta
;
Franquet, Alexis
;
Opsomer, Karl
;
Conard, Thierry
;
Moussa, Alain
;
De Gendt, Stefan
;
Van Elshocht, Sven
;
Adelmann, Christoph
Journal
Journal of Materials Chemistry C
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1997
since deposited on 2021-10-21
Acq. date: 2025-12-12
Citations
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Views
1997
since deposited on 2021-10-21
Acq. date: 2025-12-12
Citations