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Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

Date

2013-07
Journal article
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dc.contributor.authorHan, Jeong Hwan
dc.contributor.authorUngur, Elisaveta
dc.contributor.authorFranquet, Alexis
dc.contributor.authorOpsomer, Karl
dc.contributor.authorConard, Thierry
dc.contributor.authorMoussa, Alain
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAdelmann, Christoph
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2021-10-21T08:08:01Z
dc.date.available2021-10-21T08:08:01Z
dc.date.issued2013-07
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22458
dc.identifier.urlhttp://pubs.rsc.org/en/content/articlelanding/2013/tc/c3tc31172d#!divAbstractLanding/2013/TC/c3tc31172d#!divAbstract
dc.source.beginpage5981
dc.source.endpage5989
dc.source.issue37
dc.source.journalJournal of Materials Chemistry C
dc.source.volume1
dc.title

Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

dc.typeJournal article
dspace.entity.typePublication
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