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Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regime

Date

1996
Proceedings Paper
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dc.contributor.authorDepas, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorNigam, Tanya
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-29T14:26:47Z
dc.date.available2021-09-29T14:26:47Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1201
dc.source.beginpage533
dc.source.conferenceExtended Abstracts of the 1996 International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate26/08/1996
dc.source.conferencelocationYokohama Japan
dc.source.endpage535
dc.title

Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regime

dc.typeProceedings paper
dspace.entity.typePublication
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