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Vapor phase doping with N-type dopant into silicon by atmospheric pressure chamical vapor deposition

Date

2008
Proceedings Paper
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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNguyen, Duy
dc.contributor.authorLeys, Frederik
dc.contributor.authorLoo, Roger
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-17T11:07:46Z
dc.date.available2021-10-17T11:07:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14533
dc.source.beginpage495
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage502
dc.title

Vapor phase doping with N-type dopant into silicon by atmospheric pressure chamical vapor deposition

dc.typeProceedings paper
dspace.entity.typePublication
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