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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Publication:
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Date
2003
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Westlinder, J.
;
Schram, Tom
;
Pantisano, Luigi
;
Cartier, Eduard
;
Kerber, Andreas
;
Lujan, Guilherme
;
Olsson, J.
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
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1872
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1872
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations