Publication:
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Date
| dc.contributor.author | Westlinder, J. | |
| dc.contributor.author | Schram, Tom | |
| dc.contributor.author | Pantisano, Luigi | |
| dc.contributor.author | Cartier, Eduard | |
| dc.contributor.author | Kerber, Andreas | |
| dc.contributor.author | Lujan, Guilherme | |
| dc.contributor.author | Olsson, J. | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.imecauthor | Schram, Tom | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.date.accessioned | 2021-10-15T07:47:31Z | |
| dc.date.available | 2021-10-15T07:47:31Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8398 | |
| dc.source.beginpage | 550 | |
| dc.source.endpage | 552 | |
| dc.source.issue | 9 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 24 | |
| dc.title | On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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