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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

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dc.contributor.authorWestlinder, J.
dc.contributor.authorSchram, Tom
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorLujan, Guilherme
dc.contributor.authorOlsson, J.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-15T07:47:31Z
dc.date.available2021-10-15T07:47:31Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8398
dc.source.beginpage550
dc.source.endpage552
dc.source.issue9
dc.source.journalIEEE Electron Device Letters
dc.source.volume24
dc.title

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

dc.typeJournal article
dspace.entity.typePublication
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