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Articles
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Publication:
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Shimura, Y.
;
Takeuchi, Shotaro
;
Nishimura, T.
;
Eneman, Geert
;
Firrincieli, Andrea
;
Demeulemeester, Jelle
;
Vantomme, Andre
;
Clarysse, Trudo
;
Nakatsuka, O.
;
Zaima, S.
;
Dekoster, Johan
;
Caymax, Matty
;
Loo, Roger
Journal
Microelectronic Engineering
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1923
since deposited on 2021-10-19
Acq. date: 2026-01-09
Citations
Metrics
Views
1923
since deposited on 2021-10-19
Acq. date: 2026-01-09
Citations