Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger

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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Date

2011

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Demeulemeester, Jelle

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Microelectronic Engineering

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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

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