Publication:

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Date

2011
Journal article
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Author(s)

Vincent, Benjamin  
;
Shimura, Y.
;
Takeuchi, Shotaro
;
Nishimura, T.
;
Eneman, Geert  
;
Firrincieli, Andrea  
;
Demeulemeester, Jelle
;
Vantomme, Andre  
;
Clarysse, Trudo
;
Nakatsuka, O.
;
Zaima, S.
;
Dekoster, Johan  
;
Caymax, Matty  
;
Loo, Roger  

Journal

Microelectronic Engineering

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