Publication:

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Date

2011
Journal article
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNishimura, T.
dc.contributor.authorEneman, Geert
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorVantomme, Andre
dc.contributor.authorClarysse, Trudo
dc.contributor.authorNakatsuka, O.
dc.contributor.authorZaima, S.
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T21:22:48Z
dc.date.available2021-10-19T21:22:48Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20098
dc.source.beginpage342
dc.source.endpage346
dc.source.issue4
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

dc.typeJournal article
dspace.entity.typePublication
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