Publication:

The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

Date

2025
Journal article
https://doi.org/10.1109/LED.2025.3549865
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dc.contributor.authorTang, Hongwei
dc.contributor.authorLin, Dennis
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMatsubayashi, Daisuke
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorWan, Yiqun
dc.contributor.authorDekkers, Harold
dc.contributor.authorLi, Jie
dc.contributor.authorSubramanian, Shruthi
dc.contributor.authorChen, Zhuo
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorJiang, Yuchao
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorBelmonte, Attilio
dc.contributor.imecauthorTang, Hongwei
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorChasin, Adrian
dc.contributor.imecauthorMatsubayashi, Daisuke
dc.contributor.imecauthorvan Setten, Michiel
dc.contributor.imecauthorWan, Yiqun
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorLi, Jie
dc.contributor.imecauthorSubramanian, Shruthi
dc.contributor.imecauthorChen, Zhuo
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorJiang, Yuchao
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorAfanas'ev, Valeri
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.orcidimecTang, Hongwei::0009-0005-1345-5551
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.contributor.orcidimecMatsubayashi, Daisuke::0000-0002-2332-2569
dc.contributor.orcidimecvan Setten, Michiel::0000-0003-0557-5260
dc.contributor.orcidimecWan, Yiqun::0009-0003-9520-9631
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecLi, Jie::0009-0005-0093-537X
dc.contributor.orcidimecChen, Zhuo::0000-0002-7407-8885
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecJiang, Yuchao::0009-0004-6729-9526
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.date.accessioned2025-05-22T04:42:50Z
dc.date.available2025-05-22T04:42:50Z
dc.date.issued2025
dc.description.abstractWhile we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ∼ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T =4 K - 300 K) and multi-frequency (f =1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.
dc.description.wosFundingTextThis work was supported in part by the imec's Industrial Partners in the Active Memory Program; in part by the NanoIC Pilot Line (nanoic-project.eu) funded by the Chips Joint under taking, through European Union's Digital Europe under Grant 101183266; and in part by the Horizon Europe Programs (the participating states Belgium (Flanders), France, Germany, Finland, Ireland, and Romania) under Grant 101183277.
dc.identifier.doi10.1109/LED.2025.3549865
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45698
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage761
dc.source.endpage764
dc.source.issue5
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume46
dc.subject.keywordsCELL
dc.title

The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

dc.typeJournal article
dspace.entity.typePublication
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