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Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices

Date

2018
Meeting abstract
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dc.contributor.authorPorret, Clément
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorSammak, Amir
dc.contributor.authorScappucci, Giordano
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKohen, David
dc.contributor.authorKunert, Bernardette
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-26T01:29:42Z
dc.date.available2021-10-26T01:29:42Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31556
dc.identifier.urlhttps://www.istdm-icsi-2018.com/openconf/modules/request.php?module=oc_program&action=summary.php&id=39
dc.source.conference1st Joint ISTDM / ICSI 2018 Conference
dc.source.conferencedate27/05/2018
dc.source.conferencelocationPotsdam Germany
dc.title

Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices

dc.typeMeeting abstract
dspace.entity.typePublication
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