Publication:

Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs

Date

2019
Proceedings Paper
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dc.contributor.authorVandemaele, Michiel
dc.contributor.authorKaczer, Ben
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorStanojevic, Zlatan
dc.contributor.authorMakarov, Alexander
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorBury, Erik
dc.contributor.authorMertens, Hans
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-27T21:35:11Z
dc.date.available2021-10-27T21:35:11Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34288
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720406
dc.source.beginpage1
dc.source.conference2019 IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey USA
dc.source.endpage7
dc.title

Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs

dc.typeProceedings paper
dspace.entity.typePublication
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