Publication:
STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) process
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1986 since deposited on 2021-10-21
1last month
Acq. date: 2025-12-15
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Metrics
Views
1986 since deposited on 2021-10-21
1last month
Acq. date: 2025-12-15
Citations