Publication:
STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) process
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1989 since deposited on 2021-10-21
2last month
Acq. date: 2026-09-15
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Statistics
Views
1989 since deposited on 2021-10-21
2last month
Acq. date: 2026-09-15
Citations