Publication:

STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) process

Date

2013
Proceedings Paper
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dc.contributor.authorJang, Doyoung
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorMiyaguchi, Kenichi
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorChiarella, Thomas
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorDehan, Morin
dc.contributor.authorMercha, Abdelkarim
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorMiyaguchi, Kenichi
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecMiyaguchi, Kenichi::0000-0002-7073-6457
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned2021-10-21T08:31:55Z
dc.date.available2021-10-21T08:31:55Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22540
dc.source.beginpage159
dc.source.conference43rd European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate16/09/2013
dc.source.conferencelocationBucharest Romania
dc.source.endpage162
dc.title

STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) process

dc.typeProceedings paper
dspace.entity.typePublication
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