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Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices

Date

2011
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dc.contributor.authorRosseel, Erik
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-19T18:16:31Z
dc.date.available2021-10-19T18:16:31Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19706
dc.source.conferenceInternational Topical Workshop onSubsecond Thermal Processing of Advanced Materials - Subtherm
dc.source.conferencedate25/10/2011
dc.source.conferencelocationDresden Germany
dc.title

Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices

dc.typeOral presentation
dspace.entity.typePublication
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