Publication:

N+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structure

Date

2005
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRies, Michael
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T01:30:02Z
dc.date.available2021-10-16T01:30:02Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10429
dc.source.beginpage119
dc.source.conferenceSemiconductor Defect Engineering - Materials, Synthetic Structures, and Devices
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage124
dc.title

N+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structure

dc.typeProceedings paper
dspace.entity.typePublication
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