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Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Acurio Mendez, Eliana
;
Crupi, Felice
;
De Jaeger, Brice
;
Ronchi, Nicolo
;
Bakeroot, Benoit
;
Decoutere, Stefaan
;
Trojman, Lionel
Journal
IEEE Transactions on Electron Devices
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1877
since deposited on 2021-10-27
1
last month
Acq. date: 2025-12-10
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Metrics
Views
1877
since deposited on 2021-10-27
1
last month
Acq. date: 2025-12-10
Citations