Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

dc.contributor.author	Acurio Mendez, Eliana
dc.contributor.author	Crupi, Felice
dc.contributor.author	De Jaeger, Brice
dc.contributor.author	Ronchi, Nicolo
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Trojman, Lionel
dc.contributor.imecauthor	De Jaeger, Brice
dc.contributor.imecauthor	Ronchi, Nicolo
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	De Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimec	Ronchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-27T07:25:04Z
dc.date.available	2021-10-27T07:25:04Z
dc.date.issued	2019
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/32403
dc.identifier.url	https://ieeexplore.ieee.org/document/8599127
dc.source.beginpage	883
dc.source.endpage	889
dc.source.issue	2
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	66
dc.title	Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
dc.type	Journal article
dspace.entity.type	Publication
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