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Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions
Publication:
Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions
Date
2013
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Groeseneken, Guido
;
Aoulaiche, Marc
;
Cho, Moon Ju
;
Franco, Jacopo
;
Kaczer, Ben
;
Kauerauf, Thomas
;
Mitard, Jerome
;
Ragnarsson, Lars-Ake
;
Roussel, Philippe
;
Toledano Luque, Maria
Journal
Abstract
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Views
1950
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
Metrics
Views
1950
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations