Publication:

Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

Date

2021
Proceedings Paper
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dc.contributor.authorDiehle, Patrick
dc.contributor.authorHübner, Susanne
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorGeens, Karen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorAltmann, Frank
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-31T08:30:26Z
dc.date.available2021-10-31T08:30:26Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36674
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9393835
dc.source.beginpage10
dc.source.conferenceInternational Conference on Advanced Semi-conductor Devices And Microsystems
dc.source.conferencedate11/10/2020
dc.source.conferencelocationSmolenice Slovakia
dc.source.endpage13
dc.title

Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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