Channel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETs

dc.contributor.author	Srinivasan, Purushothaman
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-16T05:22:14Z
dc.date.available	2021-10-16T05:22:14Z
dc.date.issued	2005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/11261
dc.source.beginpage	133
dc.source.conference	Proceedings of the 8th Annual Workshop on Semiconductor Advances Future Electronics and Sensors - SAFE
dc.source.conferencedate	17/11/2005
dc.source.conferencelocation	Veldhoven The Netherlands
dc.source.endpage	138
dc.title	Channel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETs
dc.type	Proceedings paper
dspace.entity.type	Publication
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