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Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits

 
dc.contributor.authorErofeev, Ivan
dc.contributor.authorHartanto, Antony Winata
dc.contributor.authorSaidov, Khakimjon
dc.contributor.authorAabdin, Zainul
dc.contributor.authorPacco, Antoine
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorTjiu, Weng Weei
dc.contributor.authorHui, Hui Kim
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorMirsaidov, Utkur
dc.contributor.imecauthorPacco, Antoine
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecPacco, Antoine::0000-0001-6330-5053
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecHolsteyns, Frank::0009-0002-2123-452X
dc.date.accessioned2024-09-23T13:55:56Z
dc.date.available2024-07-04T18:38:12Z
dc.date.available2024-09-23T13:55:56Z
dc.date.embargo2024-06-24
dc.date.issued2024
dc.description.wosFundingTextThis work was supported by the Singapore National Research Foundation's Competitive Research Program funding (NRF-CRP23-2019-0001).
dc.identifier.doi10.1002/aelm.202400035
dc.identifier.issn2199-160X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44116
dc.publisherWILEY
dc.source.beginpageArt. 2400035
dc.source.endpageN/A
dc.source.issue9
dc.source.journalADVANCED ELECTRONIC MATERIALS
dc.source.numberofpages7
dc.source.volume10
dc.subject.keywordsEVOLUTION
dc.subject.keywordsRESISTIVITY
dc.subject.keywordsMOLYBDENUM
dc.subject.keywordsTEMPERATURE
dc.subject.keywordsRU
dc.title

Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits

dc.typeJournal article
dspace.entity.typePublication
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