Publication:
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
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Acq. date: 2026-01-12
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Acq. date: 2026-01-11
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1 since deposited on 2021-10-20
Acq. date: 2026-01-12
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1895 since deposited on 2021-10-20
2last month
1last week
Acq. date: 2026-01-11
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