Publication:

Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs

Date

2012
Proceedings Paper
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Author(s)

Togo, Mitsuhiro
;
Lee, Jae Woo
;
Pantisano, Luigi
;
Chiarella, Thomas  
;
Ritzenthaler, Romain  
;
Krom, Raymond
;
Hikavyy, Andriy  
;
Loo, Roger  
;
Rosseel, Erik  
;
Brus, Stephan  
;
Maes, J.W.
;
Machkaoutsan, Vladimir  
;
Tolle, J.
;
Eneman, Geert  
;
De Keersgieter, An  
;
Boccardi, Guillaume  
;
Mannaert, Geert  
;
Altamirano Sanchez, Efrain  
;
Locorotondo, Sabrina  
;
Demand, Marc  
;
Horiguchi, Naoto  
;
Thean, Aaron  

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