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Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Date

2008
Proceedings Paper
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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T07:23:02Z
dc.date.available2021-10-17T07:23:02Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13801
dc.source.beginpage353
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage356
dc.title

Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

dc.typeProceedings paper
dspace.entity.typePublication
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