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Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
Publication:
Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vais, Abhitosh
;
Alian, AliReza
;
Nyns, Laura
;
Franco, Jacopo
;
Sioncke, Sonja
;
Putcha, Vamsi
;
Yu, Hao
;
Mols, Yves
;
Rooyackers, Rita
;
Lin, Dennis
;
Maes, Jan
;
Xie, Qi
;
Givens, M.
;
Tang, F.
;
Jiang, X.
;
Mocuta, Anda
;
Collaert, Nadine
;
De Meyer, Kristin
;
Thean, Aaron
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1
since deposited on 2021-10-23
Acq. date: 2025-10-23
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2010
since deposited on 2021-10-23
Acq. date: 2025-10-23
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Downloads
1
since deposited on 2021-10-23
Acq. date: 2025-10-23
Views
2010
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations