Publication:

Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

Date

2016
Proceedings Paper
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dc.contributor.authorVais, Abhitosh
dc.contributor.authorAlian, AliReza
dc.contributor.authorNyns, Laura
dc.contributor.authorFranco, Jacopo
dc.contributor.authorSioncke, Sonja
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorYu, Hao
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLin, Dennis
dc.contributor.authorMaes, Jan
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, M.
dc.contributor.authorTang, F.
dc.contributor.authorJiang, X.
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecMols, Yves::0000-0002-7072-0113
dc.date.accessioned2021-10-23T15:48:46Z
dc.date.available2021-10-23T15:48:46Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27424
dc.identifier.urllayer http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573410
dc.source.beginpage140
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate13/06/2016
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage141
dc.title

Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

dc.typeProceedings paper
dspace.entity.typePublication
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