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Articles
Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
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Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
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Date
2024
Journal article
https://doi.org/10.1021/acsaelm.4c00877
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Uedono, Akira
;
Fleischmann, Claudia
;
Soulie, Jean-Philippe
;
Ayyad, Mustafa
;
Scheerder, Jeroen
;
Adelmann, Christoph
;
Uzuhashi, Jun
;
Ohkubo, Tadakatsu
;
Michishio, Koji
;
Oshima, Nagayasu
;
Ishibashi, Shoji
Journal
ACS APPLIED ELECTRONIC MATERIALS
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693
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Acq. date: 2025-12-12
Citations
Metrics
Views
693
since deposited on 2024-08-07
5
last month
3
last week
Acq. date: 2025-12-12
Citations