Publication:

Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Date

2024
Journal article
https://doi.org/10.1021/acsaelm.4c00877
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cris.virtual.orcid0000-0003-1531-6916
cris.virtual.orcid0000-0002-5956-6485
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dc.contributor.authorUedono, Akira
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorScheerder, Jeroen
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorUzuhashi, Jun
dc.contributor.authorOhkubo, Tadakatsu
dc.contributor.authorMichishio, Koji
dc.contributor.authorOshima, Nagayasu
dc.contributor.authorIshibashi, Shoji
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorScheerder, Jeroen
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecAyyad, Mustafa::0000-0003-2222-8295
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecScheerder, Jeroen::0000-0002-9301-0392
dc.date.accessioned2024-09-23T12:34:15Z
dc.date.available2024-08-07T19:37:37Z
dc.date.available2024-09-23T12:34:15Z
dc.date.issued2024
dc.description.wosFundingTextA part of this work was supported by the Japan Science and Technology Agency (JST) as part of Adopting Sustainable Partnerships for Innovative Research Ecosystem (ASPIRE), Grant Number JPMJAP2321. S.I. is grateful for the support from Tsukuba Materials Research. A part of this work was also supported by Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM) of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Proposal Number JPMXP1223AT5043. This work was supported by IMEC's industrial affiliate program on nanointerconnects. The authors would also like to thank Dr Alex Merkulov (imec) and Dr Richard J. H. Morris (imec) for their valuable input on the SIMS data analysis.
dc.identifier.doi10.1021/acsaelm.4c00877
dc.identifier.issn2637-6113
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44273
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage5894
dc.source.endpage5902
dc.source.issue8
dc.source.journalACS APPLIED ELECTRONIC MATERIALS
dc.source.numberofpages9
dc.source.volume6
dc.subject.keywordsELECTRICAL-RESISTIVITY
dc.subject.keywordsELECTROPLATED CU
dc.subject.keywordsOXIDATION
dc.subject.keywordsFILMS
dc.subject.keywordsELECTROMIGRATION
dc.subject.keywordsSYSTEM
dc.subject.keywordsIMPACT
dc.subject.keywordsSCALE
dc.title

Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

dc.typeJournal article
dspace.entity.typePublication
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