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On the characterisation of grown-in defects in Czocharski-grown Si and Ge

Date

2008
Journal article
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorRoussel, Philippe
dc.contributor.authorMeuris, Marc
dc.contributor.authorMlynarczyk, K.
dc.contributor.authorSpiewak, P.
dc.contributor.authorGeens, Wim
dc.contributor.authorRomandic, I.
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T12:19:31Z
dc.date.available2021-10-17T12:19:31Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0957-4522
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14721
dc.source.beginpageS24
dc.source.endpageS31
dc.source.issueSuppl.1
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.volume19
dc.title

On the characterisation of grown-in defects in Czocharski-grown Si and Ge

dc.typeJournal article
dspace.entity.typePublication
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