The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes

Publication:

2004

Journal article

Author(s)

Chiou, T.B.

;

Chen, A.C.

;

Tseng, S.E.

;

Eurlings, M.

;

;

Hsu, S.

Japanese Journal of Applied Physics. Part 1: Regular Papers

1987 since deposited on 2021-10-15

1last month

Acq. date: 2025-12-11