Publication:

Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

Date

2020
Journal article
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dc.contributor.authorZhou, L.
dc.contributor.authorLiu, Q.
dc.contributor.authorYang, H.
dc.contributor.authorJi, Z.
dc.contributor.authorXu, H.
dc.contributor.authorTang, B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJiang, H.
dc.contributor.authorLuo, Y.
dc.contributor.authorWang, X.
dc.contributor.authorMa, X.
dc.contributor.authorLi, Y.
dc.contributor.authorLuo, J.
dc.contributor.authorYin, H.
dc.contributor.authorZhao, C.
dc.contributor.authorWang, W.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-29T09:05:07Z
dc.date.available2021-10-29T09:05:07Z
dc.date.issued2020
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36415
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9103041
dc.source.beginpage498
dc.source.endpage505
dc.source.issue3
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume20
dc.title

Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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