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AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
Publication:
AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
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Date
2024
Journal article
https://doi.org/10.1063/5.0212145
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cardinael, Pieter
;
Yadav, Sachin
;
Hahn, Herwig
;
Zhao, Ming
;
Banerjee, Sourish
;
Kazemi Esfeh, Babak
;
Mauder, Christof
;
O'Sullivan, Barry
;
Peralagu, Uthayasankaran
;
Vohra, Anurag
;
Langer, Robert
;
Collaert, Nadine
;
Parvais, Bertrand
;
Raskin, Jean-Pierre
Journal
APPLIED PHYSICS LETTERS
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103
since deposited on 2024-08-22
27
last month
4
last week
Acq. date: 2026-01-09
Views
125
since deposited on 2024-08-22
3
last month
Acq. date: 2026-01-09
Citations