Publication:

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Date

2024
Journal article
https://doi.org/10.1063/5.0212145
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dc.contributor.authorCardinael, Pieter
dc.contributor.authorYadav, Sachin
dc.contributor.authorHahn, Herwig
dc.contributor.authorZhao, Ming
dc.contributor.authorBanerjee, Sourish
dc.contributor.authorKazemi Esfeh, Babak
dc.contributor.authorMauder, Christof
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorVohra, Anurag
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorParvais, Bertrand
dc.contributor.authorRaskin, Jean-Pierre
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBanerjee, Sourish
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorKazemi Esfeh, Babak
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBanerjee, Sourish::0000-0002-4124-7881
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecKazemi Esfeh, Babak::0009-0007-5368-306X
dc.date.accessioned2025-06-26T12:53:56Z
dc.date.available2024-08-22T17:59:03Z
dc.date.available2025-06-26T12:53:56Z
dc.date.embargo2024-08-15
dc.date.issued2024
dc.description.wosFundingTextNo Statement Available
dc.identifier.doi10.1063/5.0212145
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44354
dc.publisherAIP Publishing
dc.source.beginpageArt. 72103
dc.source.endpageN/A
dc.source.issue7
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages7
dc.source.volume125
dc.title

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

dc.typeJournal article
dspace.entity.typePublication
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