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Extraction of the appropriate material property for realistic modeling of through-silicon-vias using μ-raman spectroscopy

Date

2008
Proceedings Paper
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dc.contributor.authorOkoro, Chukwudi
dc.contributor.authorYang, Yu
dc.contributor.authorVandevelde, Bart
dc.contributor.authorSwinnen, Bart
dc.contributor.authorVandepitte, Dirk
dc.contributor.authorVerlinden, Bert
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.imecauthorVandevelde, Bart
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecVandevelde, Bart::0000-0002-6753-6438
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecSwinnen, Bart::0000-0002-6878-7124
dc.date.accessioned2021-10-17T09:28:53Z
dc.date.available2021-10-17T09:28:53Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14249
dc.source.beginpage16
dc.source.conference11th International Interconnect Technology Conference - IITC
dc.source.conferencedate1/06/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage18
dc.title

Extraction of the appropriate material property for realistic modeling of through-silicon-vias using μ-raman spectroscopy

dc.typeProceedings paper
dspace.entity.typePublication
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