Publication:

Special Session: STT-MRAMs: Technology, Design and Test

Date

2022-06-15
Proceedings Paper
https://doi.org/10.1109/VTS52500.2021.9794278
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dc.contributor.authorGebregiorgis, Anteneh
dc.contributor.authorWu, Lizhou
dc.contributor.authorMuench, Christopher
dc.contributor.authorRao, Siddharth
dc.contributor.authorTahoori, Mehdi B.
dc.contributor.authorHamdioui, Said
dc.contributor.imecauthorRao, Siddharth
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.date.accessioned2022-12-01T09:39:05Z
dc.date.available2022-09-16T02:49:57Z
dc.date.available2022-10-11T13:20:50Z
dc.date.available2022-12-01T09:39:05Z
dc.date.embargo9999-12-31
dc.date.issued2022-06-15
dc.identifier.doi10.1109/VTS52500.2021.9794278
dc.identifier.eisbn978-1-6654-1060-1
dc.identifier.issn1093-0167
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40434
dc.publisherIEEE
dc.source.conference40th IEEE VLSI Test Symposium (VTS)
dc.source.conferencedateAPR 25-27, 2022
dc.source.conferencelocationSan Diego, CA, USA
dc.source.journal2022 IEEE 40th VLSI Test Symposium (VTS)
dc.source.numberofpages10
dc.subject.disciplineApplied physics
dc.subject.disciplineElectrical & electronic engineering
dc.title

Special Session: STT-MRAMs: Technology, Design and Test

dc.typeProceedings paper
dspace.entity.typePublication
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