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TSV first and last: through-Si via technologies for 3D SIC and 3D WLP - part 2
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TSV first and last: through-Si via technologies for 3D SIC and 3D WLP - part 2
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Date
2009-01
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Provoost, Jan
;
Beyne, Eric
Journal
ElectroIQ
Abstract
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1819
since deposited on 2021-10-18
1
last month
Acq. date: 2025-12-16
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Metrics
Views
1819
since deposited on 2021-10-18
1
last month
Acq. date: 2025-12-16
Citations