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The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics
Publication:
The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics
Date
2008-07
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cho, Hag-Ju
;
Yu, Hong Yu
;
Chang, Vincent S.
;
Akheyar, Amal
;
Jakschik, Stefan
;
Conard, Thierry
;
Hantschel, Thomas
;
Delabie, Annelies
;
Adelmann, Christoph
;
Van Elshocht, Sven
;
Ragnarsson, Lars-Ake
;
Schram, Tom
;
Absil, Philippe
;
Biesemans, Serge
Journal
IEEE Electron Device Letters
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1877
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
1877
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations