Publication:

The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics

Date

2008-07
Journal article
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dc.contributor.authorCho, Hag-Ju
dc.contributor.authorYu, Hong Yu
dc.contributor.authorChang, Vincent S.
dc.contributor.authorAkheyar, Amal
dc.contributor.authorJakschik, Stefan
dc.contributor.authorConard, Thierry
dc.contributor.authorHantschel, Thomas
dc.contributor.authorDelabie, Annelies
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-17T06:31:49Z
dc.date.available2021-10-17T06:31:49Z
dc.date.issued2008-07
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13519
dc.identifier.urlhttp://ieeexplore.ieee.org/iel5/55/4558060/04558118.pdf?tp=&isnumber=4558060&arnumber=4558118&punumber=55
dc.source.beginpage743
dc.source.endpage745
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics

dc.typeJournal article
dspace.entity.typePublication
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