Publication:

Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

Date

2023
Journal article
https://doi.org/10.1103/PhysRevApplied.19.034081
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dc.contributor.authorMinj, Albert
dc.contributor.authorGeens, Karen
dc.contributor.authorLiang, Hu
dc.contributor.authorHan, Han
dc.contributor.authorNoel, Celine
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorParedis, Kristof
dc.contributor.authorZhao, Ming
dc.contributor.authorHantschel, Thomas
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorNoel, Celine
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorParedis, Kristof
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecNoel, Celine::0000-0002-3000-8914
dc.contributor.orcidimecParedis, Kristof::0000-0002-5163-4164
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2024-01-22T14:54:20Z
dc.date.available2024-01-22T14:54:20Z
dc.date.embargo2023-02-10
dc.date.issued2023
dc.description.wosFundingTextThe authors would like to thank H. Hahn, M. Marx, R. Oligschlaeger, D. Fahle, and M. Heuken at AIXTRON SE for epitaxial growth on the engineered QST substrates. The project has received funding from the European Union?s Horizon 2020 research and innovation programme under Marie Sklodowska-Curie Grant No. 896390. This project has received funding from the ECSEL Joint Undertaking (JU) under Grant No. 826392. The JU receives support from the European Union?s Horizon 2020 research and innovation program and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, and Switzerland.
dc.identifier.doi10.1103/PhysRevApplied.19.034081
dc.identifier.issn2331-7019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43436
dc.publisherAMER PHYSICAL SOC
dc.source.beginpageArt. 034081
dc.source.endpageN/A
dc.source.issue3
dc.source.journalPHYSICAL REVIEW APPLIED
dc.source.numberofpages16
dc.source.volume19
dc.subject.keywordsSCANNING KELVIN PROBE
dc.subject.keywordsFORCE MICROSCOPY
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsDEFECTS
dc.title

Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

dc.typeJournal article
dspace.entity.typePublication
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