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Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages
Publication:
Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages
Date
2008
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kudina, V.
;
Lukyanchikova, N.
;
Garbar, N.
;
Smolanka, A.
;
Simoen, Eddy
;
Claeys, Cor
Journal
Ukrainian Journal of Physics
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1916
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
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Views
1916
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations