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Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages

Date

2008
Journal article
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dc.contributor.authorKudina, V.
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T08:03:56Z
dc.date.available2021-10-17T08:03:56Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn2071-0186
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13965
dc.source.beginpage74
dc.source.endpage79
dc.source.issue1
dc.source.journalUkrainian Journal of Physics
dc.source.volume53
dc.title

Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages

dc.typeJournal article
dspace.entity.typePublication
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