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Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching
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Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching
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Date
2023
Journal article
https://doi.org/10.1021/acsaelm.3c00489
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Singh, Vivek
;
Sinha, Jyoti
;
Avasthi, Sushobhan
Journal
ACS APPLIED ELECTRONIC MATERIALS
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891
since deposited on 2024-01-11
Acq. date: 2025-12-15
Citations
Metrics
Views
891
since deposited on 2024-01-11
Acq. date: 2025-12-15
Citations