Publication:

Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching

Date

2023
Journal article
https://doi.org/10.1021/acsaelm.3c00489
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dc.contributor.authorSingh, Vivek
dc.contributor.authorSinha, Jyoti
dc.contributor.authorAvasthi, Sushobhan
dc.contributor.imecauthorSingh, Vivek
dc.contributor.imecauthorSinha, Jyoti
dc.contributor.orcidimecSinha, Jyoti::0000-0003-4360-7657
dc.date.accessioned2024-01-24T11:12:04Z
dc.date.available2024-01-11T17:16:18Z
dc.date.available2024-01-24T11:12:04Z
dc.date.issued2023
dc.description.wosFundingTextThe authors acknowledge the Department of Science and Technology, Government of India, for financial support under its Nano Mission initiative project number SR/NM/NS1078/2016. The work was conducted at NNfC and MNCF with generous support from MeitY under grant MeitY 5(3)/2017- NANO, by the DST under grant DST/NM/NNetRA/2018(G)-IISc and MHRD.
dc.identifier.doi10.1021/acsaelm.3c00489
dc.identifier.issn2637-6113
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43384
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage6490
dc.source.endpage6499
dc.source.issue12
dc.source.journalACS APPLIED ELECTRONIC MATERIALS
dc.source.numberofpages10
dc.source.volume5
dc.subject.keywordsTHIN-FILMS
dc.subject.keywordsOXIDE
dc.subject.keywordsMECHANISM
dc.subject.keywordsBIPOLAR
dc.subject.keywordsTIO2
dc.subject.keywordsCUXO
dc.title

Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching

dc.typeJournal article
dspace.entity.typePublication
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