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Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

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dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorMingardi, Andrea
dc.contributor.authorBrissonneau, Vincent
dc.contributor.authorLoo, Roger
dc.contributor.authorShimura, Yosuke
dc.contributor.authorAkula, Anjani
dc.contributor.authorPuttarame Gowda, Pallavi
dc.contributor.authorZhou, Daisy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKuhn, M.
dc.contributor.authorMurakami, S.
dc.contributor.authorIto, Y.
dc.contributor.authorHiguchi, A.
dc.contributor.authorLeray, Philippe
dc.contributor.authorCharley, Anne-Laure
dc.contributor.imecauthorBogdanowicz, J.
dc.contributor.imecauthorMingardi, A.
dc.contributor.imecauthorBrissonneau, V.
dc.contributor.imecauthorLoo, R.
dc.contributor.imecauthorShimura, Y.
dc.contributor.imecauthorAkula, A.
dc.contributor.imecauthorGowda, P. P.
dc.contributor.imecauthorZhou, D.
dc.contributor.imecauthorHoriguchi, N.
dc.contributor.imecauthorBiesemans, S.
dc.contributor.imecauthorLeray, P.
dc.contributor.imecauthorCharley, A. -L.
dc.date.accessioned2025-07-28T03:57:28Z
dc.date.available2025-07-28T03:57:28Z
dc.date.issued2025
dc.description.wosFundingTextThis work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states Belgium (Flanders), France, Germany, Finland, Ireland and Romania. For more information, visit nanoic-project.eu.
dc.identifier.doi10.1117/12.3050810
dc.identifier.eisbn978-1-5106-8639-7
dc.identifier.isbn978-1-5106-8638-0
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45953
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage134261G-1
dc.source.conference2025 Conference on Metrology Inspection and Process Control-Annual
dc.source.conferencedate2025-02-24
dc.source.conferencelocationSan Jose
dc.source.endpage134261G-7
dc.source.journalProceedings of SPIE
dc.source.numberofpages7
dc.title

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

dc.typeProceedings paper
dspace.entity.typePublication
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