Publication:

Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs

Date

2016
Proceedings Paper
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Author(s)

Franco, Jacopo  
;
Kaczer, Ben  
;
Vais, Abhitosh  
;
Sioncke, Sonja
;
Arimura, Hiroaki  
;
Putcha, Vamsi  
;
Alian, AliReza  
;
Waldron, Niamh  
;
Zhou, Daisy  
;
Nyns, Laura  
;
Mitard, Jerome  
;
Witters, Liesbeth  
;
Heyns, Marc  
;
Groeseneken, Guido  
;
Collaert, Nadine  
;
Linten, Dimitri  

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