Publication:

Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs

Date

2016
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorAlian, AliReza
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorNyns, Laura
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-23T10:52:36Z
dc.date.available2021-10-23T10:52:36Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26631
dc.source.conferenceWorkshop on Dielectrics in Microelectronics - WoDiM
dc.source.conferencedate27/06/2016
dc.source.conferencelocationCatania Italy
dc.title

Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs

dc.typeProceedings paper
dspace.entity.typePublication
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