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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
Publication:
Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
Date
2022
Journal article
https://doi.org/10.1016/j.microrel.2022.114680
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Yu-Yun
;
Wang, Kuan-Chi
;
Chang, Ting -Yu
;
Ronchi, Nicolo
;
O'Sullivan, Barry
;
Banerjee, Kaustuv
;
Van den Bosch, Geert
;
Van Houdt, Jan
;
Wu, Tian-Li
Journal
MICROELECTRONICS RELIABILITY
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1339
since deposited on 2022-12-30
Acq. date: 2025-10-25
Citations
Metrics
Views
1339
since deposited on 2022-12-30
Acq. date: 2025-10-25
Citations