Publication:
Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
| dc.contributor.author | Wang, Yu-Yun | |
| dc.contributor.author | Wang, Kuan-Chi | |
| dc.contributor.author | Chang, Ting -Yu | |
| dc.contributor.author | Ronchi, Nicolo | |
| dc.contributor.author | O'Sullivan, Barry | |
| dc.contributor.author | Banerjee, Kaustuv | |
| dc.contributor.author | Van den Bosch, Geert | |
| dc.contributor.author | Van Houdt, Jan | |
| dc.contributor.author | Wu, Tian-Li | |
| dc.contributor.imecauthor | Ronchi, Nicolo | |
| dc.contributor.imecauthor | O'Sullivan, Barry | |
| dc.contributor.imecauthor | Banerjee, Kaustuv | |
| dc.contributor.imecauthor | Van den Bosch, Geert | |
| dc.contributor.imecauthor | Van Houdt, Jan | |
| dc.contributor.orcidimec | Ronchi, Nicolo::0000-0002-7961-4077 | |
| dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
| dc.contributor.orcidimec | Banerjee, Kaustuv::0000-0001-8003-6211 | |
| dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
| dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
| dc.date.accessioned | 2023-03-09T14:37:03Z | |
| dc.date.available | 2022-12-30T03:10:10Z | |
| dc.date.available | 2023-03-09T14:37:03Z | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | This work was financially supported by the "Center for the Semi-conductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the National Science and Technology Conucil (NSTC), under Grant 111-2634-F-A49-008, 111-2622-8-A49-018-SB, and the Young Scholar Fellowship Program under Grant 111-2636-E-A49-012. | |
| dc.identifier.doi | 10.1016/j.microrel.2022.114680 | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40921 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | 114680 | |
| dc.source.endpage | na | |
| dc.source.issue | na | |
| dc.source.journal | MICROELECTRONICS RELIABILITY | |
| dc.source.numberofpages | 7 | |
| dc.source.volume | 138 | |
| dc.title | Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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