Publication:

Gate-First High-k/Metal Gate FinFET for advanced DRAM peripheral transistors

Date

2022-09-20
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dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorCapogreco, Elena
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorTao, Zheng
dc.contributor.authorSebaai, Farid
dc.contributor.authorSpessot, Alessio
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecDentoni Litta, Eugenio::0000-0003-0333-376X
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCapogreco, Elena::0000-0003-3610-3629
dc.contributor.orcidimecSebaai, Farid::0009-0008-0186-6101
dc.date.accessioned2024-01-16T11:13:33Z
dc.date.available2023-01-09T09:18:41Z
dc.date.available2024-01-16T11:13:33Z
dc.date.embargo9999-12-31
dc.date.issued2022-09-20
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40955
dc.source.conferenceMNE - PESM 2022
dc.source.conferencedate2022-09
dc.source.conferencelocationLeuven (Belgium)
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsGate, Etch, HKMG, Gate-first
dc.title

Gate-First High-k/Metal Gate FinFET for advanced DRAM peripheral transistors

dc.typeOral presentation
dspace.entity.typePublication
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